OverviewThe C30927EH-01 is a quadrant silicon avalanche photodiode (APD) with a 1.55 mm useful diameter designed on a double-diffused reach-through structure. It is optimized for operation near 1064 nm and delivers high responsivity and fast response for laser detection and position-sensing applications.
Applications- Laser alignment and YAG/Nd:YAG detection
- Position sensing and beam profiling
- Optical metrology and scientific instrumentation
- OEM detector modules for pulsed and continuous-wave sources
DetailsThe quadrant layout uses a common avalanche junction with quadrant separation achieved by segmentation of the light-entry p+ surface opposite the junction. This design eliminates dead space between elements, preserving response at boresight. The device is optimized around 1064 nm while maintaining strong responsivity at 1060 nm. It is supplied in hermetically sealed, low-profile TO-8 packages suitable for integration in compact detector assemblies.
Key Features and Benefits- Full angle for fully illuminated photosensitive surface > 90°
- High quantum efficiency optimized for YAG wavelengths
- Fast time response for pulsed laser detection (typical rise/fall ~3 ns)
- Large active area (1.77 mm²) for ease of alignment
- Hermetically sealed, low-profile TO-8 package for reliable mounting
Technical specifications- Breakdown voltage range (V): 350 to 485
- Typical breakdown voltage (V): 425
- Typical gain (M): 100
- Typical temperature coefficient for constant gain (V/°C): 2.4
- Minimal responsivity at 1060 nm (A/W): 12
- Typical responsivity at 1060 nm (A/W): 15
- Typical total dark current (nA): 100
- Maximal total dark current (nA): 200
- Typical noise current per element (pA/√Hz): 1.0
- Maximal noise current per element (pA/√Hz): 1.5
- Typical total capacitance of all quadrants (pF): 3
- Maximal total capacitance of all quadrants (pF): 5
- Maximal series resistance (Ω): 15
- Typical rise and fall time (ns): 3
- Storage temperature (°C): -60 to 120
- Operating temperature (°C): -40 to 60