Wavelength-sensitive photodiode C30724EH
avalanchesiliconinfrared

Wavelength-sensitive photodiode - C30724EH - Excelitas Technologies - PCO - avalanche / silicon / infrared
Wavelength-sensitive photodiode - C30724EH - Excelitas Technologies - PCO - avalanche / silicon / infrared
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Characteristics

Type
wavelength-sensitive, avalanche, silicon, infrared

Description

Product overview
The C30724EH silicon avalanche photodiode (Si APD) delivers peak sensitivity at 920 nm in a hermetically sealed metal TO-18 package. It features a low temperature coefficient and fast response optimized for 905 nm laser ranging and related industrial sensing applications.

Series description
The C30724 series provides high responsivity across 800–950 nm with rise and fall times of approximately 5 ns and no fall-time tail. Designed for high-volume 905 nm laser range-finding, these APDs can be run at fixed bias without active temperature compensation.

Key features:
  • Si APD with integrated 905 nm filter in metal TO-18 can
  • ~5 ns rise and fall times, no trailing edge in fall time
  • Operates at low gain
  • Low temperature coefficient — no temperature compensation required

Key applications:
  • Laser range finding
  • Laser distance meters
  • Traffic speed measurement

Technical specifications:
  • Active area: 0.2 mm²
  • Active diameter: 0.5 mm
  • Breakdown voltage: 350 V
  • Capacitance: 1 pF
  • Dark current: 20 nA
  • Gain: >12, 15, <18
  • Noise current: 0.1 pA/√Hz
  • Package: TO-18
  • Peak sensitivity wavelength: 920 nm
  • Responsivity: 8.5 A/W at 920 nm
  • Rise/fall time: 5 ns
  • Total dark current (bulk + surface): 20 nA
  • Operating voltage range: 150-200 V
  • Wavelength range: 400-1100 nm

Catalogs

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Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall B4 - Stand 302

  • More information

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