Wavelength-sensitive photodiode C30737LH-500-80N

siliconavalancheinfrared

Description: The C30737LH-500-80N silicon avalanche photodiode (Si APD) features a 500 µm active diameter and an enhanced spectral response around 800 nm. Supplied in a leadless ceramic carrier (LCC), it is designed for fast detection and high responsivity across the visible to near-infrared range.

Key Features:

• High responsivity from 500 nm to 1000 nm
• Low noise with extremely fast rise times; frequency response above 1.3 GHz
• 500 µm active diameter, optimized for peak sensitivity at 800 nm
• Leadless ceramic carrier option ("LH") for compact surface-mount compatibility

Applications:

• LiDAR systems
• Laser range-finding
• Security and scanning instrumentation
• Cost-sensitive applications requiring a high-performance photodetector

Technical specifications:

• Active Diameter: 500 µm
• Peak Sensitivity Wavelength: 800 nm
• Breakdown Voltage Vbd: 120–210 V (binning available)
• Temperature Coefficient of Vop for Constant M: 0.5 V/°C
• Gain: 100 at 800 nm
• Responsivity: 50 A/W at 800 nm
• Dark Current Id: 0.1–1 nA
• Noise Current: 0.1 pA/√Hz
• Capacitance: 2 pF
• Rise/Fall Time: 0.3 ns (R load = 50 Ω)
• Cut-off Frequency: 1.3 GHz
• Storage Temperature: -50 °C to +100 °C
• Operating Temperature: -40 °C to +85 °C
• Package: 3 x 3 mm glass window, leadless ceramic carrier (LCC)
• Window: Standard