Silicon photodiode VTB8440BH

wavelength-sensitive

Product description
The VTB8440BH is a blue-enhanced silicon photodiode in an 8 mm recessed ceramic package protected by a clear epoxy layer. A built-in IR rejection filter limits the device response to the visible spectrum. The photodiode offers very high shunt resistance and very low dark current, making it suitable for precision light measurements.

Additional information
The VTB8440BH provides a 5.16 mm² active area and is optimized for photovoltaic operation; a small reverse bias can be applied if required. Its high shunt resistance minimizes offset in high-gain transimpedance amplifier circuits.

Features & Benefits

• Visible spectral response (330–720 nm)
• 1%–2% linearity over 7 to 9 decades
• Very low dark current (≤2 nA at 2 V reverse)
• Very high shunt resistance for low offsets
• RoHS compliant

Applications

• Ambient light sensing
• Light meters and photometry
• Flame monitoring
• Scientific and industrial photodetection

Technical specifications

• Active area = 5.16 mm²
• Short-circuit current = Min. 4 µA at 100 fc, 2850 K
• Dark current = Max. 2 nA at 2 V reverse bias
• Junction capacitance = Typ. 1.0 nF at 0 V bias
• Spectral range = 330 nm to 720 nm
• Peak spectral response = 580 nm
• Sensitivity at peak wavelength = Typ. 0.29 A/W
• Angular response = ±50° at 50% response