Silicon photodiode FFD-100H

PIN

Product description
The FFD-100H is a large-area silicon PIN photodiode with a 2.5 mm active diameter in a hermetically sealed TO-5 package. It delivers high responsivity across 400–1150 nm with peak response near 920 nm and an ultrafast 1 ns rise/fall time. The device features low dark current, low NEP and low operating voltage, making it suitable for high-speed optical detection in industrial and instrumentation applications.

Features & benefits

• Large-area silicon (Si) PIN photodiode
• Hermetically sealed TO-5 metal package
• 2.5 mm active diameter
• Ultrafast 1 ns rise/fall time
• Isolated photodiode chip with low capacitance

Applications

• Laser detection and monitoring systems
• Laser power control and safety interlocks
• Fast pulse detection for semiconductor inspection
• High-speed instrumentation and measurement
• High-speed optical switching

Technical specifications

• Breakdown voltage: 150 V
• Capacitance: 8.5 pF
• Dark current: < 25 nA
• Noise current: < 90 fA/√Hz
• Package: TO-5 (hermetically sealed)
• Active diameter: 2.5 mm
• Spectral range: 400 nm – 1150 nm
• Responsivity: 0.6 A/W (typical)
• Peak responsivity (overview): 920 nm; Peak wavelength (spec table): 850 nm
• Rise / fall time: 1 ns
• Low NEP and low operating voltage