UV photodiode VTB8440H

wavelength-sensitiveinfraredsilicon

Description
The VTB8440H Blue-Enhanced Silicon Photodiode is housed in an 8 mm recessed ceramic package with clear epoxy protection. It delivers an enhanced response in the blue spectral region while maintaining very high shunt resistance and low dark current, making it suitable for precision light measurement applications.

The device provides a 5.16 mm² active area and a spectral response from 320 nm to 1100 nm. Built as a P-on-N silicon planar photodiode, the VTB8440H is optimized for strong response across the visible spectrum and offers reliable photovoltaic-mode operation.

Primarily intended for photovoltaic use, the photodiode can operate with a small reverse bias when required. Its very high shunt resistance minimizes offset in high-gain transimpedance amplifier circuits, improving measurement stability and accuracy.

Features & Benefits

• UV to Near-IR spectral range (320–1100 nm)
• 1%–2% linearity over 7 to 9 decades
• Very low dark current (≤ 2 nA at 2 V reverse bias)
• Very high shunt resistance for low offset in high-gain circuits
• RoHS compliant

Applications

• UV and blue light sensing
• Light meters and photometric instruments
• Flame monitoring
• General photometry and laboratory detectors

Technical specifications

• Active area: 5.16 mm²
• Short-circuit current: Min. 35 µA at 100 fc, 2850 K
• Dark current: Max. 2 nA at 2 V reverse bias
• Junction capacitance: Typ. 1.0 nF at 0 V bias
• Spectral range: 320 nm to 1100 nm
• Peak spectral response: 920 nm
• Sensitivity at peak wavelength: Typ. 0.5 A/W
• Angular response: ±50° at 50% response
• Package: 8 mm recessed ceramic package with clear epoxy protection
• Construction: P-on-N silicon planar photodiode, optimized for visible response
• Operating mode: Primarily photovoltaic; may be used with small reverse bias; very high shunt resistance suitable for high-gain transimpedance amplifier circuits