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High sensitivity in the near infrared region: QE=36% (λ=1000 nm), back-thinned type FFT-CCD This FFT-CCD for measurement has improved sensitivity in the near infrared region of 800 nm or above. In addition ...
HAMAMATSU
... sensitivity in the near infrared region: QE=36% (λ=1000 nm), back-thinned type FFT-CCD, One-stage TE-cooled type This FFT-CCD for measurement has improved sensitivity in the near infrared region of 800 ...
HAMAMATSU
The G14714-1024DG is an InGaAs linear image sensor designed for foreign object detection. The CMOS chip consists of charge amplifiers, shift registers, and timing generator. Charge amplifiers are configured ...
HAMAMATSU
... sensing capabilities of the pixel that was engineered for enhanced near infrared (NIR) detection. For NIR applications the sensor provides increased sensitivity to lessen ...
... series of polarization image sensors has a multi-directional polarizer which is formed on top of the photodiode of the image sensor chip (On-Chip Polarizer). In addition ...
Sony Semiconductors
... are members of Teledyne e2v’s Ruby family of CMOS imaging sensors. These breakthrough devices provide sensitivity and performance beyond that considered possible on a front side illuminated sensor with ...
e2v scientific instruments
... temerature sensor and black level reference - Good Near Infra Red (NIR) response - Spectral range from under 350 nm to over 1000 nm - Sensor without cover glass - wide temperature range: ...
... General description 2.2 MP NIR enhanced global shutter image sensor designed for 2D and 3D consumer and industrial machine vision applications. Due to its small size, ...
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