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... This series of silicon carbide ( SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes ...
DC voltage: 1.45 V - 2.2 V
Reverse voltage: 600 V - 1,200 V
... by the use of silicon-carbide ( SiC) diodes. ST proposes a 600 to 1200 V range with single and dual diodes encapsulated in package sizes from PowerFLATTM 8x8 to TO-247, including the ceramic insulated ...
DC voltage: 1.5 V - 3 V
Reverse voltage: 600, 1,250, 650 V
... Renesas' fast recovery diodes offer quick recovery times for rectification purposes in very high-frequency applications. ...
Reverse voltage: 650 V
... Shorter recovery time, enabling high-speed switching. FEATURES: Shorter recovery tim Reduced temperature dependence High-speed switching possible High surge current capability ...
ROHM Semiconductor
Reverse voltage: 650 V
... Shorter recovery time, enabling high-speed switching. FEATURES: Reduced temperature dependence High-speed switching possible High surge current capability ...
ROHM Semiconductor
Reverse voltage: 650 V
... Shorter recovery time, enabling high-speed switching. FEATURES: Reduced temperature dependence High-speed switching possible High surge current capability ...
ROHM Semiconductor
Reverse voltage: 650, 1,200 V
... Typical Applications Rectification of high frequencies High efficient switching stages Power Factor Correction Diodes Free-wheeling diodes for inverters Commercial / industrial grade Suffix -Q: AEC-Q101 compliant ‘) Suffix ...
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