Schottky diode STPSC10065
standardrectifierpower

Schottky diode - STPSC10065 - STMicroelectronics - standard / rectifier / power
Schottky diode - STPSC10065 - STMicroelectronics - standard / rectifier / power
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Characteristics

Technology
Schottky
Mounting
standard
Function
rectifier
Electrical characteristics
power, high-voltage
Technical characteristics
SiC
DC voltage

Max.: 2.2 V

Min.: 1.45 V

Reverse voltage

Max.: 1,200 V

Min.: 600 V

Description

In addition to ensuring compliance with today's most stringent energy efficiency regulations (Energy Star, 80Plus, and European Efficiency), ST's silicon-carbide diodes show four times better dynamic characteristics with 15% less forward voltage (VF) than standard silicon diodes. Silicon-carbide diodes belong to our STPOWER family. The efficiency and robustness of solar inverters, motor drives, uninterruptible power supplies and circuits in electrical vehicles are therefore greatly improved by the use of silicon-carbide (SiC) diodes. ST proposes a 600 to 1200 V range with single and dual diodes encapsulated in package sizes from PowerFLATTM 8x8 to TO-247, including the ceramic insulated TO-220. SiC diodes in 10, 15 and 20A versions are newly encapsulated in the D2PAK which features wider creepage distance for higher electric and pollution standards.

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Exhibitions

Meet this supplier at the following exhibition(s):

EMO 2025
EMO 2025

22-26 Sep 2025 Hannover (Germany)

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    SPS 2025
    SPS 2025

    25-27 Nov 2025 Nürnberg (Germany) Hall 4 - Stand 271

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    *Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.