IGBT gate driver BAP-1551

IGBT gate driver
IGBT gate driver
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IGBT, insulated


BAP-1551 Half Bridge IGBT Driver Gate Drive Board Application Note and Datasheet FEATURES INCLUDE • Includes all power supplied needed to drive a half-bridge circuit • Short circuit and over current protection • Over voltage and under voltage lockout protection • Over temperature protection • DC link voltage sensing • Full set of protection and sensing information available from I/O connector • Built in dead-time generation The BAP-1551 Insulated Gate Bipolar Transistor (IGBT) Gate Drive Board (GDB) discussed in this Datasheet/Applications Note provides a safe, reliable, isolated interface between control logic and an IGBT based power stage. With minimal development time and cost, a single phase half bridge inverter, with up to three dual IGBTs in parallel, can be designed and built using the techniques described below. Two half bridge inverters can be configured as a full bridge and three half bridges can be combined to create a three phase system. Typically, the most unreliable portion of a motor controller/inverter design is the power stage. In most if not all cases, this is due to inadequate control of the power semiconductors. The APS IGBT GDB is a robust design (see Figure 1 Block diagram) offering the necessary protection features to ensure a reliable power stage including: two forms of over current protection, DC link over voltage protection, over temperature protection, and under voltage lock-out. Also provided as feedback signals to the control logic are isolated, analog, real-time representations of the output current, the DC link voltage and the temperature sensor interface that can be mounted on a heatsink.
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