Semiconductor test platform FTI-1000 Flexible Power

Overview
FTI‑1000 Flexible is a compact, modular multi‑site automated test equipment (ATE) platform for high‑mix testing of medium‑power Si and GaN discrete power devices. Configured for 8–16 sites, it supports up to 1.2 kV and 100 A in a low‑footprint architecture, with independent DC and AC resources and comprehensive MOSFET and power‑device measurements including DC characteristics, ΔVsd, gate charge, gate resistance and inductive switching.

Key promises / positioning

• Adaptable by design — modular architecture enables rapid reconfiguration for different device types and test flows.
• High throughput — 8‑site baseline and optimized test sequencing to reduce cycle time for mixed production.
• Operational efficiency — compact footprint and fast changeovers suitable for combined R&D and automated production.

Applications
Final test and characterization for automotive, industrial and wide‑bandgap (Si / GaN) discrete power devices; engineering validation, UIS/avalanche testing and gate characterization.

Integration & software
Mechanical openness and modularity enable compatibility with pick‑and‑place, gravity‑feed and leadframe‑strip handlers. Test development, debug and characterization are performed through FTI Studio with waveform capture, automated data‑sheet generation, schmoo plotting and parameter‑analysis tools.

Product notes
Tester‑per‑Channel Board modular architecture provides configurable AC and DC resources within a single scalable platform. Plug‑in options and modular mechanical/electrical elements enable expansion (HV extensions, high‑current pulse modules, digitizers, Rg measurement modules).

Technical specifications

• Platform family: FTI‑1000 Flexible
• Number of test sites: 8-16
• Maximum switching voltage (AC / DC): 1.2 kV
• Maximum switching / DC current: 100 A
• Short circuit energy capability: >10 J
• Gate voltage range: ±25 V
• DC parametric tests (examples): Rdson, Idon, Vce(sat), Vgs, Gfs, Igss, Idss, BVdss
• Gate oxide and quality measurements: Rg, Cg, Qg
• Thermal die‑attach quality indicator: dVsd / Vgs
• UIS / avalanche / body diode metrics: UIL, EAR, EAS
• Digital channels: option for 8 independent digital channels (IC Channel Board)
• Gate resistance options: 0, 10, 25, 50 Ω plus user‑pluggable R
• Load inductor: pluggable discrete inductors or selectable inductor box
• DC source drive (HV): voltage 1.2 kV; example HV current drive range: 25 mA
• Nominal current capability (DC/AC): 100 A
• Dimensions (overall): 541 mm × 345 mm × 206 mm • Power Supply: 345 mm × 176 mm × 103 mm
• Software (FTI Studio): waveform capture, automated data‑sheet generation, schmoo plotting, parameter analysis, test program creation/debugging
• Handling compatibility: pick‑and‑place, gravity‑feed, leadframe strip handlers and other standard automated handlers