Temperature measuring system EtchTemp™

for wafers

The EtchTemp™ series of in situ wafer temperature measurement systems, available in both 300mm and 200mm configurations, captures the effects of the plasma etch process environment on production wafers under real process conditions. The EtchTemp-HD measurement system includes high sensor density enabling across-wafer temperature monitoring that strongly correlates with CD uniformity control for conductor etch applications. By characterizing thermal conditions that closely represent product wafer conditions, the EtchTemp-HD wireless wafer assists process engineers with tuning the etch process conditions, and the qualification, matching and post-PM verification of front end of line plasma etch chambers. Applications Process development, Process qualification, Process tool monitoring, Process tool qualification, Chamber matching, Process tool matching Dielectric plasma etch (EtchTemp), Conductor plasma etch (EtchTemp-HD, EtchTemp SE-HD, EtchTemp-SE), Ion implant | 20-140°C Temporal and spatial temperature data under real process conditions for characterization of multiple zone electrostatic chuck (ESC) wafer processes. Temporal and spatial temperature data under real process conditions for characterization of wafer etch processes below 20°C Temporal and spatial temperature data under real process conditions for characterization of high total power, high aspect-ratio contact (HARC) etch wafer processes Temporal and spatial temperature data under real process conditions for characterization of high-power, high-frequency silicon etch wafer processes Temporal and spatial temperature data under real process conditions for characterization of high-power,