Photodiode microchip S570

Description The proximity optical sensor is InGaAs/InP top-illumination photodiode chip, planar structure, anode on the front, cathode on the back, the size of square active area is 570um*570um, with high ESD, low dark current and other characteristics, has a high response in the wavelength range of 1300nm~1550nm. The response in the wavelength range of 300nm~750nm is very small, which solves the problem of OLED screen optical reception. Features High Electro-Static Discharge Design. Anode on top and cathode on back. Low dark current. Excellent responsivity and high gain. 570μm x 570μm square active area Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Applications Ambient Light Sensing. Cell Phone Touch Screen Disable.