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Electric chamfering machine GC-BD804
precisionfor wafersdouble-head

Electric chamfering machine - GC-BD804 - Qingdao Gaoce Technology Co., Ltd. - precision / for wafers / double-head
Electric chamfering machine - GC-BD804 - Qingdao Gaoce Technology Co., Ltd. - precision / for wafers / double-head
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Characteristics

Operation
electric
Applications
precision, for wafers
Other characteristics
double-head
Rotational speed

Max.: 100,000 rpm
(628,318.5307 rad.min-1)

Min.: 0 rpm
(0 rad.min-1)

Description

Product Introduction
This equipment is designed for edge chamfering of semiconductor silicon wafers and is compatible with 4", 6" and 8" wafers. It supports processing of the OF (Orientation Flat) surface and offers an optional NOTCH groove processing function. The machine delivers high processing accuracy, efficient throughput and stable operation suited for production environments.

Product Parameters
Host dimensions (L*W*H): 2,250 * 1,650 * 2,600 mm; Weight: 3,000 kg
Wafer sizes: 4", 6", 8"
Wafer thickness range: 300 μm – 1,500 μm
Workstation: Dual workstation
Wafer reference surface: OF / Notch (Notch optional)
Equipment footprint (W*D*H): 2,250 * 1,650 * 2,600 mm
Grinding X/Y/Z axis accuracy: ±1 μm; Ceramic suction cup planar accuracy: ≤3 μm
Grinding bench spindle end-face & radial accuracy: ±1 μm; Grinding wheel spindle end-face & radial accuracy: ±1 μm
Grinding wheel outer diameter: Φ202 mm; Mounting bore: Φ30 mm; Wheel thickness: 20 mm
Grinding wheel speed: 0–4,000 r/min (customizable)
Notch wheel speed: 0–100,000 r/min (customizable)
Grinding wheel profiles supported: T, R, TT, RR, TR, etc.
Wafer thickness measurement: Contact or non-contact; repeated measurement accuracy ±2 μm; measurement points: 8 circumferential + 1 center
Cleaning method: Rotary cleaning
Drying method: Centrifugal drying
Loading/unloading: 4 boxes; 25 slots (adjustable)

Characteristics / Technical specifications
  • Model: GC-BD804
  • Application: Edge chamfering of semiconductor silicon wafers (4", 6", 8")
  • Host dimensions (L*W*H): 2,250 * 1,650 * 2,600 mm
  • Host weight: 3,000 kg
  • Wafer thickness range: 300 μm – 1,500 μm
  • Workstation configuration: Dual workstation for increased throughput
  • Reference surface processing: OF; Notch processing optional
  • Positioning accuracy X/Y/Z: ±1 μm; ceramic suction cup planar accuracy ≤3 μm
  • Grinding spindle and wheel end-face & radial accuracy: ±1 μm
  • Grinding wheel: OD Φ202 mm, bore Φ30 mm, thickness 20 mm
  • Wheel speed configurable to customer requirements (0–4,000 r/min); Notch wheel up to 0–100,000 r/min
  • Supported wheel types: T, R, TT, RR, TR, etc.
  • Thickness measurement system: Contact or non-contact; repeatability ±2 μm; 8 circumferential points + center
  • Integrated rotary cleaning and centrifugal drying processes
  • Loading/unloading design: 4 boxes with 25 adjustable slots
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.