Hard metal diamond wire

for silicon

Product Description
Special diamond wire engineered for slicing silicon semiconductor wafers and carbide materials. Delivers stable, efficient cutting with reduced wire breakage. The product incorporates an automatic control system that minimizes abrasive (sand) volume fluctuation to ensure uniform abrasive distribution and consistent cutting quality. Manufacturing is performed under high‑definition monitoring for traceability. A dedicated surface/treatment process enhances wire toughness and abrasion resistance, lowering breakage rates.

Product Parameters
Spec. & Model | Diameter of Finished Wire(μm) | Breaking force(N) | Purpose
45μm | 62±3 | ≥9 | Silicon semiconductor slicing
65μm | 77±3 | ≥15 | Silicon semiconductor slicing
70μm | 80±3 | ≥17 | Silicon semiconductor slicing
70μm (12inch dedicated) | 82±2 | ≥17 | Silicon semiconductor slicing
100μm | 111±3 | ≥29 | Silicon semiconductor slicing

Features / Technical specifications

• Available finished wire diameters: 45 μm, 65 μm, 70 μm, 70 μm (12‑inch dedicated), 100 μm.
• Breaking force specifications: 45 μm ≥9 N (62±3 baseline), 65 μm ≥15 N (77±3 baseline), 70 μm ≥17 N (80±3 baseline), 70 μm 12‑inch ≥17 N (82±2 baseline), 100 μm ≥29 N (111±3 baseline).
• Main application: slicing silicon wafers and carbide materials for semiconductor production.
• Design: stable and efficient cutting with reduced wire breakage.
• Control system: automatic abrasive‑volume control to minimize fluctuations and ensure uniform abrasive distribution.
• Production & quality: manufacturing under high‑definition monitoring for full traceability.
• Material treatment: special treatment process to improve wire toughness and abrasion resistance, reducing breakage.