Product introductionThis series grinder is designed for thinning hard and brittle materials. It uses an in-feed grinding principle: the rotating wafer is ground by a rotating grinding wheel with vertical feed. The GC-BG202H is optimized for high rigidity and is suitable for efficient, high-precision processing of silicon carbide wafers as well as conventional silicon wafers.
Product parametersWafer sizes supported: 8 inch, 6 inch
Wafer thickness range: 0.1 mm – 1 mm
Grinding principle: In-feed
Grinding wheel size: 12 inch (300 mm)
Grinding mode: Auto / Manual
Material box quantity: 2 (compatible with 8" and 6")
Processing sides: Single- or double-sided thinning (programmable selection)
Weight: 9500 KG
Dimensions (L×W×H): 3050 × 1495 × 2180 mm
Related products- GC-SCDW8300 Silicon carbide slicing machine
- GC-TD804 Silicon carbide chamfering machine
- GC-BG202H Automatic thinning grinder
Features / Technical specifications- Intended materials: hard and brittle materials, especially silicon carbide wafers and silicon wafers
- Wafer sizes: 8 inch, 6 inch
- Processing thickness range: 0.1 mm – 1 mm
- Grinding wheel: 12 inch (300 mm)
- Grinding principle: In-feed; modes: automatic or manual
- Spindles: 2 (Z1, Z2) with air bearings
- Spindle motor power: 11 KW; spindle speed: 1000–3000 rpm (Z1/Z2 adjustable independently)
- Z-axis travel: 150 mm; resolution / minimum move: 0.1 μm
- Z-axis speed: 0.0001–0.08 mm/s; maximum speed 50 mm/s
- Wafer tables: 3 (A, B, C) with air bearings and vacuum adsorption
- Wafer table speed: 0–500 rpm (individually settable)
- Wafer table switching: air turntable
- Table cleaning methods: oilstone, two-fluid, brush
- Material boxes: 2 (compatible with 8" and 6")
- Weight: 9500 KG; Dimensions: 3050 × 1495 × 2180 mm