Electron beam evaporator EFM 3
laboratory

electron beam evaporator
electron beam evaporator
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Characteristics

Type
electron beam
Laboratory/process
laboratory

Description

Evaporation area Ø 5 - 20 mm Flux monitor Integrated shutter Rear-loading of evaporant EFM 3 for VT SPM and for LT SPM packages A FOCUS product The EFM 3 is designed for thin film growth and molecular beam epitaxy. Sub-monolayer and multilayer systems can be produced with evaporation rates varying from 1/10 monolayer per minute to over 1000 monolayers per second. Water-cooling ensures low background pressure (typically in the 10-10 mbar range) during evaporation - and thus allows the growth of ultra-pure films. The precisely defined evaporant beam allows highly uniform deposition on the sample. The deposition area is determined by the choice of three different easily exchangeable exit apertures and the distance from the source to the sample. A part of the evaporant beam is ionised. When these ions hit the substrate, they may create defects in the substrate surface and deposit energy. To avoid this the EFM 3 may optionally be equipped with an ion suppressor which repels the ions back into the EFM.

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