MOCVD deposition machine Propel™ Power

thin-film

Single-Wafer Reactor Technology to Enable Efficient, GaN-Based Power Devices Veeco’s Propel™ Power GaN MOCVD system is designed specifically for the power electronics industry. Featuring a single-wafer reactor platform, capable of processing six- and eight-inch wafers, the system deposits high-quality GaN films for the production of highly efficient power electronic devices. The single-wafer reactor is based on Veeco’s leading TurboDisc® design with breakthrough technology, including the new IsoFlange™ and SymmHeat™ technologies that provide homogeneous laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco K465i™ and MaxBright™ systems to the Propel Power GaN MOCVD platform. Outstanding film uniformity, yield and device performance Features long campaign runs and low particle defects for exceptional yield and flexibility Fast cycles of learning accelerate GaN-on-Si R&D transition to high-volume manufacturing Modular design for ease of configuration, operation and maintenance