IGBT phototransistor

switchingsiliconGaAs

DESCRIPTION The VOS618A series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat package. It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits. FEATURES • High CTR with low input current • Low profile package (half pitch) • High collector emitter voltage, VCEO = 80 V • Isolation test voltage = 3750 VRMS • Low coupling capacitance • High common mode transient immunity APPLICATIONS • Telecom • Industrial controls • Battery powered equipment • Office machines • Programmable controllers