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IGBT phototransistor H11 seriesswitchingSMDGaAs
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Characteristics
- Type
- IGBT
- Technology
- switching
- Other characteristics
- silicon, SMD, GaAs
- Current
50.5 A, 60 A, 75 A
- Voltage
Min.: 32 V
Max.: 300 V
Description
Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage
FEATURES
Very high collector emitter breakdown voltage BVCEO
Isolation test voltage: 5000 VRMS
Low coupling capacitance
APPLICATIONS
Telecom
Industrial controls
Battery powered equipment
Catalogs
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.