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IGBT phototransistor H11 series
switchingSMDGaAs

IGBT phototransistor - H11 series - VISHAY - switching / SMD / GaAs
IGBT phototransistor - H11 series - VISHAY - switching / SMD / GaAs
IGBT phototransistor - H11 series - VISHAY - switching / SMD / GaAs - image - 2
IGBT phototransistor - H11 series - VISHAY - switching / SMD / GaAs - image - 3
IGBT phototransistor - H11 series - VISHAY - switching / SMD / GaAs - image - 4
IGBT phototransistor - H11 series - VISHAY - switching / SMD / GaAs - image - 5
IGBT phototransistor - H11 series - VISHAY - switching / SMD / GaAs - image - 6
IGBT phototransistor - H11 series - VISHAY - switching / SMD / GaAs - image - 7
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Characteristics

Type
IGBT
Technology
switching
Other characteristics
silicon, SMD, GaAs
Current

50.5 A, 60 A, 75 A

Voltage

Min.: 32 V

Max.: 300 V

Description

Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage FEATURES Very high collector emitter breakdown voltage BVCEO Isolation test voltage: 5000 VRMS Low coupling capacitance APPLICATIONS Telecom Industrial controls Battery powered equipment

Catalogs

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Exhibitions

Meet this supplier at the following exhibition(s):

InnoTrans 2026
InnoTrans 2026

22-25 Sep 2026 Berlin (Germany) Hall 17 - Stand 340

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    Semiconductors

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