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IGBT phototransistor
switchingsiliconGaAs

IGBT phototransistor
IGBT phototransistor
IGBT phototransistor
IGBT phototransistor
IGBT phototransistor
IGBT phototransistor
IGBT phototransistor
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Characteristics

Type
IGBT
Technology
switching
Other characteristics
silicon, GaAs
Voltage

Min.: 30 V

Max.: 100 V

Current

50 A, 60 A, 75 A

Description

DESCRIPTION The VOS618A series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat package. It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits. FEATURES • High CTR with low input current • Low profile package (half pitch) • High collector emitter voltage, VCEO = 80 V • Isolation test voltage = 3750 VRMS • Low coupling capacitance • High common mode transient immunity APPLICATIONS • Telecom • Industrial controls • Battery powered equipment • Office machines • Programmable controllers

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.