Ceramic sheet SN-90

silicon nitride

Innovacera’s Silicon Nitride (Si₃N₄) Substrates combine exceptional thermal conductivity, high mechanical strength, and excellent fracture toughness, providing outstanding reliability for high-power electronic and thermal management applications. With a thermal expansion coefficient closely matched to silicon and superior resistance to thermal shock, these substrates maintain stable performance under extreme conditions. Their precision-engineered surfaces and customizable specifications make them ideal for IGBT power modules, high-power heat sinks, and advanced wireless modules.Features:High thermal conductivityThermal expansion coefficient close to silicon waferHigh strength and toughnessApplication:High power IGBT power moduleHigh power heat sinkWireless moduleMaterial Properties Table:PropertyTest conditionsUnitSi₃N₄ (SN-90)Material––Si₃N₄Appearance––greySurface roughnessRaμm0.2~0.75Density–g/cm³≥3.2Bending strength3-point bending resistanceMPa≥750Vickers hardnessLoad 4.9GPa≥14Water absorption–%0Thermal conductivity25℃W/(m·k)≥85Linear thermal expansion coefficient25-500℃x10⁻⁶ mm/℃2~4Thermal shock resistance800℃Time≥10Specific heat–J/(kg·K)680Dielectric constant1MHz/25℃–7~8Dielectric loss1MHz/25℃x10⁻⁴≤4Volume resistivity25℃Ω·cm>10¹⁴Breakdown voltage–kV/mm>15ReflectivityReflectivity meter––WhitenessWhiteness meter––Specifications and Dimensions:MaterialUnitSi₃N₄Effective dimensions (A, B)mm138*190Thickness (T)mm0.25, 0.32Thickness tolerancemm±5% (Min ±0.03mm)Warpage (C)mm≤0.3%Surface roughnessμm0.2-0.75Size, thickness and surface roughness can be customizedProcessing:Laser processingGrinding and polishing sheet roughness tableProjectQualifiedSpecial GradeInternal dimension tolerance±0.05mm±0.03mmExternal dimension tolerance±0.15mm±0.1mmHole tolerance (φ0.07-0.15mm)±0.05mm±0.02mmHole tolerance (φ>0.15mm)±0.1mm±0.02mmGrinding surface roughness (μm)0.3-0.60.3-0.5Fine grinding surface roughness (μm)0.1-0.40.1-0.3Polishing surface roughness (μm)≤0.1≤0.05Related Tags: high strength ceramic substrate, Si3N4 ceramic substrate, Si3N4 substrate for power module, Silicon nitride substrateTechnical characteristics / specifications:Material: Silicon Nitride (Si₃N₄)Color: GreySurface roughness: 0.2~0.75 μmDensity: ≥3.2 g/cm³Bending strength: ≥750 MPaVickers hardness: ≥14 GPaWater absorption: 0%Thermal conductivity: ≥85 W/(m·k)Linear thermal expansion coefficient: 2~4 x10⁻⁶ mm/℃Thermal shock resistance: ≥10 times at 800℃Specific heat: 680 J/(kg·K)Dielectric constant: 7~8 (1MHz/25℃)Dielectric loss: ≤4 x10⁻⁴ (1MHz/25℃)Volume resistivity: >10¹⁴ Ω·cm (25℃)Breakdown voltage: >15 kV/mmEffective dimensions: 138*190 mmThickness: 0.25, 0.32 mmThickness tolerance: ±5% (Min ±0.03mm)Warpage: ≤0.3%Processing: Laser processing, grinding, polishingCustomizable size, thickness, and surface roughness