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retort furnace / high-vacuum / chamber / diffusion
retort furnace
Small Front Load Heat Treat Furnace

Maximum temperature: 0 °C - 2200 °C

General specifications: Up to 2200C Hydrogen, Inert gas or vacuum Atmosphere Diffusion pumping system Tungsten Mesh heating elements 4" x 6 " x 8" usable hot zone Excellent temperature uniformity ...

horizontal furnace / high-vacuum / for diffusion bonding / diffusion
horizontal furnace
Medium sized heat treat furnace

Maximum temperature: 0 °C - 2200 °C

... we have provided on this heat treat furnace include operation in Hydrogen, diffusion and cryo pumping systems, heat exchanger for rapid cooling in gas, pyrometer, etc. In other words, we will customize ...

high-vacuum furnace / chamber / diffusion / nitriding
high-vacuum furnace
2 cuft Heat Treat Furnace

Maximum temperature: 0 °C - 2200 °C

Up to 2200C (4000F) maximum temperature Hydrogen, Inert gas or vacuum Atmosphere Diffusion pumping system Heat Exchanger 12" x 12" x24" usable hot zone (305mmx305mmx610mm) Excellent temperature ...

crucible furnace / top-loading / high-vacuum / chamber
crucible furnace
Four Station Indexing Sintering Furnace

Maximum temperature: 0 °C - 2300 °C

... 10°C temperature gradient across usable zone - High capacity Diffusion pumping system 10" or 16" - Gas heat exchanger for rapid load cooling - Our highest throughput batch sintering furnace - Fully ...

chamber furnace / diffusion / for solar panels / wafer
chamber furnace
POCL

Maximum temperature: 700 °C - 1000 °C

This machine is designed to dope p-type(+) wafers with phosphorus (n-type) to form a p-n junction, a critical component of silicon solar cells. GENERAL Equipment Size(㎜) : 1,850(W) x 6,490(L) x 3,570(H) Number of process chamber ...

chamber furnace / diffusion / gas-fired / nitrogen
chamber furnace
POCL3

... used as carrier gas for the POCl3 liquid. An additional oxidation steps follows to finish the process. After the adjusted diffusion time the tube opens to get unloaded and reloaded again.

vertical furnace / oxidation / diffusion / controlled atmosphere
vertical furnace
VF-5900

The furnace is a heat treatment system for silicon wafer, IGBT, polyimide and thin wafer oxidation, diffusion and CVD. As our flagship model, the furnace is equipped with a large-capacity ...

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Koyo Thermos Systems
vertical furnace / oxidation / diffusion / for IGBT
vertical furnace
VF-5700

The heat treatment system performs silicon wafer, IGBT, polyimide and thin wafer oxidation, diffusion and CVD. Since the height is less than 3000 mm, this model can be easily introduced and accomplish short cycle time ...

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Koyo Thermos Systems
conveyor furnace / diffusion / infrared / air circulating
conveyor furnace
max. 1 000 °C | DF series

Maximum temperature: 0 °C - 1000 °C

The Despatch In-line Diffusion Furnace incorporates advanced infrared thermal technology that provides the tight temperature uniformity needed for increased cell efficiencies. Air is passively preheated ...

chamber furnace / diffusion / controlled atmosphere / wafer
chamber furnace
Waferhandling Diffusion

To generate a voltage potential within the solar cell, phosphorus atoms are diffused into the crystal lattice of the wafers. This process is accomplished in a diffusion furnace using ...

conveyor furnace / diffusion / infrared / pressure
conveyor furnace
+800 °C ... +1 000 °C | Meridian™

Maximum temperature: 800 °C - 1000 °C

... processes cannot keep pace with the cost pressure facing PV manufacturers today. BTU's solution is the Meridian™ In-Line Diffusion Furnace. The system can be configured to process up to 1,500 wafers ...

pusher furnace / diffusion / convection
pusher furnace
max. 1 100 °C

Maximum temperature: 0 °C - 1100 °C

... uniformity in the firing furnace. In addition to excellent thermal uniformity the firing furnace has to control the porosity of the ceramic. For firing steps above 1100°C, BTU offers the convection batch ...

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