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ALD deposition machine ALD 1200
thin-filmroboticoptical

ALD deposition machine - ALD 1200 - Bühler Group - thin-film / robotic / optical
ALD deposition machine - ALD 1200 - Bühler Group - thin-film / robotic / optical
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Characteristics

Method
ALD
Deposition type
thin-film
Other characteristics
robotic, high-precision, optical
Applications
for displays, for optoelectronics, optical lens, for the microelectronics industry, for the optics industry, medical

Description

Overview
Experience the most innovative Atomic Layer Deposition system for optical coatings - the Leybold Optics ALD 1200. Plasma-Enhanced Spatial ALD for double-sided, ultra-uniform films on up to 8x ⌀300 mm substrates. The system delivers ultra-thin, dense, and stress-controlled coatings on micro-structured and curved 3D substrates – double-sided in a single pass. With high deposition rates on 8 substrates of up to 300 mm, process temperatures from 50–230°C, and fully customizable wafer handling solutions, it combines best‑in‑class conformality with semiconductor‑grade throughput and cleanliness.

Key Benefits
  • Precision on every surface: Ultra-thin conformal coatings on nano-structured and curved 3D substrates
  • Optimized for High Throughput: Spatial separation of gases increases growth rates; multi-wafer production in a single run
  • Tailored to your needs: Double-sided coatings without flipping, reducing cycle time and particle risk
  • Material agility: High material flexibility with efficient precursor utilization for cost‑effective scaling
  • In-situ optical monitoring: OMS 6000 closed-loop control for complex multilayer stacks with repeatable results
  • Full fab integration: SMIF and FOUP automated wafer handling; SEMI S2/S8 compliant; SECS:GEM compatible

Highlight features
  • High deposition rates of up to 0.5 nm/s on 8 substrates
  • Scalable formats up to 300 mm substrate sizes; non-uniformities < ±1.0% on 300 mm
  • High conformality and stress-neutral coatings
  • Plasma-assisted low deposition temperature < 100°C for temperature-sensitive substrates
  • Support for up to 4 different precursors
  • Fab-ready cleanliness with low particle levels tailored for precision optics and semiconductor lines
  • In-situ optical monitoring system OMS 6000

Applications
The ALD 1200 is ideal for applications requiring ultra-uniform, pinhole-free coatings on complex structures or 3D substrates such as highly curved lenses and structures with high aspect ratio. Typical application areas include:
  • Semiconductor manufacturing (hard masks, trench filling, gate oxides, encapsulation)
  • Precision optics and photonic integration (PICs, metasurfaces, diffractive optical elements)
  • Sensing (proximity sensors, hyperspectral imaging, LiDAR, CIS)
  • Lighting and display (LED, microLED, VCSEL, OLED)
  • Life science (microscopy, endoscopy)
  • Consumer optics (smartphone and camera lenses, AR glasses)

Coating processes
  • Filters
  • Mirrors
  • AR coatings
  • Trench filling
  • Barrier coatings
  • Gate oxides

Materials (examples)
  • SiO2 and various oxide materials
  • TCO material group and other materials on demand

FAQ — Good to know
  • When to use ALD? When optical quality, barrier integrity and 3D uniformity are critical. Plasma-enhanced spatial ALD produces dense, stress-neutral films at low temperatures with precise and repeatable layer control.
  • How does spatial ALD work? Spatial ALD deposits thin films by repeating self-limiting surface reactions: precursors chemisorb onto the substrate, are modified in the plasma zone, and deposit layer-by-layer for precise thickness control and conformal coverage.
  • Benefits vs sputtering/evaporation: ALD provides superior conformality, pinhole-free films and stress control on complex 3D substrates.

Caractéristiques / spécifications techniques
  • Model: ALD 1200 (Leybold Optics)
  • Deposition method: Plasma-Enhanced Spatial ALD, plasma-assisted, double-sided in single pass
  • Substrate capacity: multi-wafer (up to 8 substrates)
  • Maximum substrate size supported: Ø 300 mm
  • Deposition rate: up to 0.5 nm/s on 8 substrates
  • Process temperature range: 50–230°C; plasma-assisted low-temperature option < 100°C for temperature-sensitive substrates
  • Thickness uniformity: non-uniformities < ±1.0% on 300 mm (typical)
  • Precursors: support for up to 4 different precursors
  • Control: In-situ optical monitoring OMS 6000 for closed-loop control of multilayer stacks
  • Cleanliness: fab-ready cleanliness with low particle levels tailored for precision optics and semiconductor lines
  • Integration: SMIF and FOUP automated wafer handling; SEMI S2/S8 compliant; SECS:GEM compatible
  • Targeted applications: semiconductor devices, precision optics, photonic integration, sensing, lighting/display, life science, consumer optics

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