1. **Naming Rule**
Detection principle: Background suppression; Power supply: DC12‑24V.
Light source: Red semiconductor laser Class 2 (655 nm,1 mW).
Connection: Cable‑integrated type.
‑ NPN 20‑300 mm: CPH‑DBE300N3
‑ PNP 20‑300 mm: CPH‑DBE300P3
2. **Available Part Numbers**
CPH‑DBE300N3(NPN,20‑300mm), CPH‑DBE300P3(PNP,20‑300mm).
3. **Detection Principle**
Background‑suppression diffuse‑reflective type. Adopts BGS background‑suppression function, shields interference from different‑color backgrounds. Detects target objects by receiving reflected laser light; valid detecting range 20‑300 mm (white non‑glossy paper).
4. **Sensing Range**
Sensing distance: 20‑300 mm; Setting range:150‑300 mm.
Spot diameter: 1.5 mm @50 mm distance; 2 mm @300 mm distance.
Hysteresis: ≤2% of operating distance(white non‑glossy paper).
Repeat accuracy: ≤1 mm along sensing‑axis; ≤0.2 mm vertical to sensing‑axis.
Indicator: Red‑action indicator; Green‑power indicator. Equipped with 5‑turn mechanical distance adjuster.
5. **Main Model Versions**
NPN or PNP transistor open‑collector output; cable‑integrated (Φ3.8, 4‑core, 2 m PVC cable).
6. **Key Features**
‑ Small square housing, supply voltage DC12‑24V (ripple(p‑p) ≤10%, permissible DC10‑30V)
‑ Red semiconductor laser Class 2(655 nm1 mW), tiny‑spot for precise positioning
‑ Response time: ≤1 ms
‑ Max load current:100 mA; Residual voltage:2V@100 mA load,1V@16 mA load
‑ Operating temperature:‑25~+55 ℃(no icing, no condensation); Storage temperature:‑30~+70 ℃
‑ Protection class: IP65
‑ Built‑in reverse‑connection, surge and short‑circuit protection; BGS background‑suppression function.
7. **Operation Mode**
ON when detected / NOT‑ON when detected 2‑output modes available(BGS function).
8. **Output Options**
NPN / PNP transistor open‑collector output, max sink current 100 mA, max applied voltage 30VDC.