Diffuse reflective photoelectric sensor CPH-DE100P3rectangularsquarelaser
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Characteristics
- Sensing mode
- diffuse reflective
- Housing
- rectangular, square
- Type of beam
- laser
- Other characteristics
- compact, miniature, high-performance, waterproof, intrinsically safe, waterproof
- Applications
- for food industry applications, for logistics, for object detection, for robotics, for plastics, for gate, for packaging machines, for automatic doors
- Maximum range
Min.: 0 mm
(0 in)Max.: 100 mm
(3.9 in)
Description
1. **Naming Rule**
Detection principle: Diffuse‑reflective; Power supply: DC12‑24V.
Light source: Red semiconductor laser Class 2 (655 nm).
Connection: Cable‑integrated / M12 connector‑A type.
‑ NPN 100 mm: CPH‑DE100N3
‑ PNP 100 mm: CPH‑DE100P3
2. **Available Part Numbers**
CPH‑DE100N3(NPN,100mm), CPH‑DE100P3(PNP,100mm);
M12‑A connector versions: CPH‑DE100N3‑A, CPH‑DE100P3‑A.
3. **Detection Principle**
Diffuse‑reflective type. The sensor emits laser light, detects targets by receiving light reflected directly from the object surface. Standard test object: 300×300 mm white drawing paper.
4. **Sensing Range**
Sensing distance: 100 mm.
Spot size: 1*2 mm at 1 m distance.
Hysteresis: ≤20% of sensing distance.
Indicator: Red‑action indicator; Green‑stability indicator.
5. **Main Model Versions**
NPN or PNP transistor open‑collector output; cable‑integrated or M12‑A connector optional.
6. **Key Features**
‑ Small square housing, supply voltage DC12‑24V (ripple(p‑p) ≤10%, DC10‑30V permissible)
‑ Red semiconductor laser Class 2 (655 nm), tiny‑spot for precise positioning
‑ Response time: ≤0.5 ms
‑ Max load current: 100 mA; residual voltage ≤3V (cable 2 m)
‑ Operating temperature:‑25~+55 ℃; Storage temperature:‑25~+65 ℃ (no icing, no condensation)
‑ Protection class: IP65
‑ Built‑in reverse‑connection, surge and short‑circuit protection.
7. **Operation Mode**
Light‑ON / Dark‑ON selectable via potentiometer.
8. **Output Options**
NPN / PNP transistor open‑collector output, max load current 100 mA.1. **Naming Rule**
Detection principle: Diffuse‑reflective; Power supply: DC12‑24V.
Light source: Red semiconductor laser Class 2 (655 nm).
Connection: Cable‑integrated / M12 connector‑A type.
‑ NPN 100 mm: CPH‑DE100N3
‑ PNP 100 mm: CPH‑DE100P3
2. **Available Part Numbers**
CPH‑DE100N3(NPN,100mm), CPH‑DE100P3(PNP,100mm);
M12‑A connector versions: CPH‑DE100N3‑A, CPH‑DE100P3‑A.
3. **Detection Principle**
Diffuse‑reflective type. The sensor emits laser light, detects targets by receiving light reflected directly from the object surface. Standard test object: 300×300 mm white drawing paper.
4. **Sensing Range**
Sensing distance: 100 mm.
Spot size: 1*2 mm at 1 m distance.
Hysteresis: ≤20% of sensing distance.
Indicator: Red‑action indicator; Green‑stability indicator.
5. **Main Model Versions**
NPN or PNP transistor open‑collector output; cable‑integrated or M12‑A connector optional.
6. **Key Features**
‑ Small square housing, supply voltage DC12‑24V (ripple(p‑p) ≤10%, DC10‑30V permissible)
‑ Red semiconductor laser Class 2 (655 nm), tiny‑spot for precise positioning
‑ Response time: ≤0.5 ms
‑ Max load current: 100 mA; residual voltage ≤3V (cable 2 m)
‑ Operating temperature:‑25~+55 ℃; Storage temperature:‑25~+65 ℃ (no icing, no condensation)
‑ Protection class: IP65
‑ Built‑in reverse‑connection, surge and short‑circuit protection.
7. **Operation Mode**
Light‑ON / Dark‑ON selectable via potentiometer.
8. **Output Options**
NPN / PNP transistor open‑collector output, max load current 100 mA.
Detection principle: Diffuse‑reflective; Power supply: DC12‑24V.
Light source: Red semiconductor laser Class 2 (655 nm).
Connection: Cable‑integrated / M12 connector‑A type.
‑ NPN 100 mm: CPH‑DE100N3
‑ PNP 100 mm: CPH‑DE100P3
2. **Available Part Numbers**
CPH‑DE100N3(NPN,100mm), CPH‑DE100P3(PNP,100mm);
M12‑A connector versions: CPH‑DE100N3‑A, CPH‑DE100P3‑A.
3. **Detection Principle**
Diffuse‑reflective type. The sensor emits laser light, detects targets by receiving light reflected directly from the object surface. Standard test object: 300×300 mm white drawing paper.
4. **Sensing Range**
Sensing distance: 100 mm.
Spot size: 1*2 mm at 1 m distance.
Hysteresis: ≤20% of sensing distance.
Indicator: Red‑action indicator; Green‑stability indicator.
5. **Main Model Versions**
NPN or PNP transistor open‑collector output; cable‑integrated or M12‑A connector optional.
6. **Key Features**
‑ Small square housing, supply voltage DC12‑24V (ripple(p‑p) ≤10%, DC10‑30V permissible)
‑ Red semiconductor laser Class 2 (655 nm), tiny‑spot for precise positioning
‑ Response time: ≤0.5 ms
‑ Max load current: 100 mA; residual voltage ≤3V (cable 2 m)
‑ Operating temperature:‑25~+55 ℃; Storage temperature:‑25~+65 ℃ (no icing, no condensation)
‑ Protection class: IP65
‑ Built‑in reverse‑connection, surge and short‑circuit protection.
7. **Operation Mode**
Light‑ON / Dark‑ON selectable via potentiometer.
8. **Output Options**
NPN / PNP transistor open‑collector output, max load current 100 mA.1. **Naming Rule**
Detection principle: Diffuse‑reflective; Power supply: DC12‑24V.
Light source: Red semiconductor laser Class 2 (655 nm).
Connection: Cable‑integrated / M12 connector‑A type.
‑ NPN 100 mm: CPH‑DE100N3
‑ PNP 100 mm: CPH‑DE100P3
2. **Available Part Numbers**
CPH‑DE100N3(NPN,100mm), CPH‑DE100P3(PNP,100mm);
M12‑A connector versions: CPH‑DE100N3‑A, CPH‑DE100P3‑A.
3. **Detection Principle**
Diffuse‑reflective type. The sensor emits laser light, detects targets by receiving light reflected directly from the object surface. Standard test object: 300×300 mm white drawing paper.
4. **Sensing Range**
Sensing distance: 100 mm.
Spot size: 1*2 mm at 1 m distance.
Hysteresis: ≤20% of sensing distance.
Indicator: Red‑action indicator; Green‑stability indicator.
5. **Main Model Versions**
NPN or PNP transistor open‑collector output; cable‑integrated or M12‑A connector optional.
6. **Key Features**
‑ Small square housing, supply voltage DC12‑24V (ripple(p‑p) ≤10%, DC10‑30V permissible)
‑ Red semiconductor laser Class 2 (655 nm), tiny‑spot for precise positioning
‑ Response time: ≤0.5 ms
‑ Max load current: 100 mA; residual voltage ≤3V (cable 2 m)
‑ Operating temperature:‑25~+55 ℃; Storage temperature:‑25~+65 ℃ (no icing, no condensation)
‑ Protection class: IP65
‑ Built‑in reverse‑connection, surge and short‑circuit protection.
7. **Operation Mode**
Light‑ON / Dark‑ON selectable via potentiometer.
8. **Output Options**
NPN / PNP transistor open‑collector output, max load current 100 mA.
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