High-voltage tester FTI-1000 Wafer HV

ACDCfor electrical equipment

Product overview The FTI‑1000 Wafer HV is a wafer‑level automated test equipment (ATE) system for high‑coverage testing of power discrete devices and wide‑bandgap technologies. The Wafer HV variant provides high‑voltage DC and AC sources and is intended for single‑site probe applications requiring up to 6 kV DC and 5.5 kV AC.

Reasons why

• Flexible configuration — Modular Tester‑per‑Channel Board architecture allows independent resources and scalable expansion
• Comprehensive electrical coverage — Supports DC and AC parametric tests required for MOSFET and power device characterization
• Accessible software control — FTI Studio provides probe‑card bring‑up, test‑program development and debug tools suitable for engineering and production teams

Overview (detailed) The FTI‑1000 addresses engineering characterization and high‑volume wafer sort with independent DC and AC test resources capable of measuring key MOSFET parameters such as DC characteristics, ΔVsd, inductive switching (UIL/UIS/CIS), gate charge and gate resistance. The USB‑based modular architecture enables straightforward expansion and flexible partitioning of test resources for single‑site and multisite probe workflows. The system integrates with automated wafer probers and probe‑card interfaces without dependency on a specific mechanical platform, supporting process development, early device characterization and production wafer sort.

Features / Configurations

• Variants: Wafer HV (high‑voltage) and Wafer MV (medium‑voltage)
• Number of test sites — Wafer HV: 1; Wafer MV: up to 16
• DC parametric tests — Rdson, Idon, Vce(sat), Vgs, Gfs, Igss, Idss, etc.
• Gate measurements — Rg, Cg, Qg; selectable/pluggable Rg options (0, 10, 25, 50 Ω and user‑pluggable)
• AC sources — Wafer HV: 5.5 kV AC, Wafer MV: 1.2 kV AC
• AC switching current — Wafer HV: up to 200 A; Wafer MV: up to 100 A
• Avalanche energy capability — >10 J (both variants)
• Load inductor options — pluggable discrete inductors or selectable inductor box

Technical specifications

• Model family: FTI‑1000 Wafer
• Primary application: Wafer‑level testing for power discrete devices and wide‑bandgap components
• Architecture: Modular Tester‑per‑Channel Board, USB‑based framework; scalable for single‑site and multisite probe applications
• Software: FTI Studio — probe‑card bring‑up, test‑program development, waveform capture, automated data‑sheet generation, schmoo plotting, AEC‑Q001 Rev. C PAT analysis
• DC source voltage — Wafer HV: 6 kV; Wafer MV: 1.2 kV
• Current drive range — Wafer HV: from 10 mA; Wafer MV: from 25 mA
• Peak switching current — Wafer HV: up to 200 A; Wafer MV: up to 100 A
• Digital IO: Option for 8 independent digital channels (IC Channel Board)
• Plug‑in options: high‑voltage extensions, high‑current pulse modules, digitizers, LCR‑based Rg measurement
• Physical footprint: System 541 × 345 × 206 mm; Power supply 345 × 176 × 103 mm
• Intended sectors: Automotive, industrial, and wide‑bandgap power device development and production