high-resistance, photosensitive, high thermal stability
Description
Overview Positive-tone KrF photoresists for a broad range of semiconductor patterning applications. The GKR series provides multiple grades from high-thickness films to high-resolution formulations to suit different process requirements.
Product Lineup GKR series families:
GKR-46xx/32xx series (for implant)
GKR-53xx series (for C/H)
GKR-63xx series (for L/S)
Related Products
EUV (13.5 nm) — EUV materials for negative-tone imaging
NIL (Nanoimprint Lithography) — NIL materials for semiconductor lithography processes
ArF (193 nm) — Materials for positive dry and immersion imaging, and negative-tone imaging (NTI)
i-Line, g-Line and Broadband — Mid-UV photoresists covering sub-0.30 µm to >1.0 µm resolution
Negative (polyisoprene-based) — Series of negative-tone, polyisoprene-based resist systems
e-Beam — Positive and negative-tone resists for various e‑beam applications
Features / Technical specifications
Wavelength: 248 nm (KrF)
Tone: Positive
Main product family: GKR series
Available variants: GKR-46xx/32xx (implant), GKR-53xx (C/H), GKR-63xx (L/S)
Product range includes high-thickness films and high-resolution formulations to address varied process requirements
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
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