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Semiconductor resin ArFphotosensitiveimmersionhigh-performance
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Characteristics
- Applications
- for semiconductors
- Other characteristics
- photosensitive, immersion, high-performance
Description
Overview
Materials for positive dry and immersion imaging, and negative tone imaging (NTI). Designed for high-resolution 193 nm exposure with product options for dry and immersion processes.
Product Lineup
Features & Benefits
Specifications / Technical data
Materials for positive dry and immersion imaging, and negative tone imaging (NTI). Designed for high-resolution 193 nm exposure with product options for dry and immersion processes.
Product Lineup
- GAR Series: Products in the GAR Series are intended for applications requiring 193 nm dry exposure.
- FAiRS Series for PTI (positive tone imaging): FAiRS products tailored for 193 nm immersion exposure with positive tone imaging.
- FAiRS Series for NTI (negative tone imaging): FAiRS products tailored for 193 nm immersion exposure with negative tone imaging.
Features & Benefits
- High throughput
- Superior resolution
- Wide process windows
- Low defect levels
- Vertical profile control
Specifications / Technical data
- Wavelength: 193 nm
- Imaging modes: positive dry, immersion (PTI), negative tone imaging (NTI)
- Product series: GAR Series (dry), FAiRS Series (PTI and NTI)
- Designed for high-resolution imaging with wide process windows and low defect levels
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Semiconductor Materials
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