Si detectors for high-energy particles
The S14537 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays. These detectors are mounted on a PC board with an opening for the purpose of ΔE/E detection of charged particles and X-rays.
Features
-Large area
-Low dark current
-High voltage tolerance
S14537-320
Specifications
Photosensitive area : 28 × 28 mm
Chip thickness : 320 ± 15 μm
Dead layer thickness (Front side) : 1.5 μm
Dead layer thickness (Rear side) : 20 μm
Full depletion voltage max. : 100 V
Dark current max. : 50 nA
Cuttoff frequency : 8 MHz
Terminal capacitance : 300 pF
S14537-500
Specifications
Photosensitive area : 28 × 28 mm
Chip thickness : 320 ± 15 μm
Dead layer thickness (Front side) : 1.5 μm
Dead layer thickness (Rear side) : 20 μm
Full depletion voltage max. : 100 V
Dark current max. : 50 nA
Cuttoff frequency : 8 MHz
Terminal capacitance : 300 pF