Silicon photodiode S14537 series
PIN

silicon photodiode
silicon photodiode
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Characteristics

Type
silicon
Mounting
PIN

Description

Si detectors for high-energy particles The S14537 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays. These detectors are mounted on a PC board with an opening for the purpose of ΔE/E detection of charged particles and X-rays. Features -Large area -Low dark current -High voltage tolerance S14537-320 Specifications Photosensitive area : 28 × 28 mm Chip thickness : 320 ± 15 μm Dead layer thickness (Front side) : 1.5 μm Dead layer thickness (Rear side) : 20 μm Full depletion voltage max. : 100 V Dark current max. : 50 nA Cuttoff frequency : 8 MHz Terminal capacitance : 300 pF S14537-500 Specifications Photosensitive area : 28 × 28 mm Chip thickness : 320 ± 15 μm Dead layer thickness (Front side) : 1.5 μm Dead layer thickness (Rear side) : 20 μm Full depletion voltage max. : 100 V Dark current max. : 50 nA Cuttoff frequency : 8 MHz Terminal capacitance : 300 pF

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