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Silicon photodiode S16008
infrared

Silicon photodiode - S16008  - HAMAMATSU - infrared
Silicon photodiode - S16008  - HAMAMATSU - infrared
Silicon photodiode - S16008  - HAMAMATSU - infrared - image - 2
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Characteristics

Type
silicon, infrared

Description

The S16008 series is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides higher sensitivity than the previous S2387 series. Features - High sensitivity in visible to near infrared region - Low dark current - Superior linearity - Compatible with lead-free solder reflow Specifications Photosensitive area - 5.8 × 5.8 mm Package - Glass epoxy Package category - Surface mount type Cooling - Non-cooled Spectral response range - 380 to 1100 nm Peak sensitivity wavelength (typ.) - 960 nm Photosensitivity (typ.) - 0.64 A/W Dark current (max.) - 50 pA Rise time (typ.) - 9.0 μs Terminal capacitance (typ.) - 4000 pF Noise equivalent power (typ.) - 2.0×10-15 W/Hz1/2 Measurement condition - Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=10 mV, Rise time: VR=0 V, RL=1 kΩ, 10 to 90%, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted

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