SMD phototransistor OIT12C-S

SMD phototransistor
SMD phototransistor
SMD phototransistor
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Other characteristics
SMD, silicon

1 mA


80 mV


OIT12C-OIT12C-S 9-ch phototransistor array 0.45mm optical pitch on plastic SMD package General Description OIT12C consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector on the back substrate, which is tied to a single pad and every emitter is accessible to specific pad. The optical pitch of the array is 0.45 mm, the LCC package electrical pitch is 1.10 mm. The active area of each element is 0.25 x 0.50 mm2. The advantages of this product are the high uniformity of the silicon sensors, due to the monolithic construction and to the extremely controlled microelectronic process, the high stability of the signal and the high optical responsivity, due to the antireflective coating deposited on the phototransistor’s areas. The encapsulant is a clear epoxy material, having high hardness and high optical performances (transmittance close to 100% in the range 300-900nm). The S version has another encapsulant type, less hard, silicone based, in order to reach an extended temperature range. The size is reduced to the minimum, in order to optimize the cost and the encoder space. Two reference marks are available for the precise collimator positioning. Applications Optical encoders Incremental encoders Optical Receivers Controls/drives Light sensors Features High uniformity of the silicon cells  Smaller optical pitch, wider active area  High transparency resin  High gain  Very small dimensions  Reference points for precise mounting


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