Silicon phototransistor OIT7C
SMD

silicon phototransistor
silicon phototransistor
silicon phototransistor
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Characteristics

Other characteristics
silicon, SMD
Current

1 mA

Voltage

80 mV

Description

OIT7C 16-ch. phototransistor array 0.60mm optical pitch on plastic SMD package, cross shape OIT7C consists in three silicon phototransistor’s monolithic arrays. The two arrays of six devices are placed on top and bottom of the device, they represent each bit of the encoder disc. A further array of four devices is placed in the center. It can be used as light sensor or as adding bits, increasing the resolution of the encoder. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is 1.27 mm. The active area of each element is 0.2 x 0.45 mm. The encapsulant is an high quality microelectronic transparent resin, its transmission value is 100% in the range 300-900nm. The advantages of this product are the high uniformity of the silicon sensors, due to the monolithic construction and the high optical responsivity, due to the antireflective coating deposited on the phototransistor’s areas. The packaging method is oriented to industrial harsh applications, which means high temperature range, high stability in time and very high uniformity of the silicon cells. Applications Optical encoders 12-13 bit absolute encoders Optical Receivers Controls/drives Features High uniformity of silicon cells High transparency resin Designed to meet industrial specifications High gain Reference holes for precise mounting Custom design available 0.6 mm optical pitch (0.68 mm on request)

Catalogs

OIT7C
OIT7C
3 Pages
OIT7C
OIT7C
3 Pages
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.