Silicon phototransistor OIT29

silicon phototransistor
silicon phototransistor
silicon phototransistor
silicon phototransistor
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Other characteristics
silicon, SMD

1 mA


80 mV


OIT29 3-ch. phototransistor array 0.60mm optical pitch on plastic SMD package OIT29 consists in a three elements silicon phototransistor’s monolithic array. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is 1.27 mm. The active area of each element is 0.2 x 0.45 mm. The encapsulant is an high quality microelectronic transparent silicone resin: its transmission value is greater than 95% between 300nm and 400nm while it is very close to 100% in the range 400-900nm. The phototransistors have an antireflective coating that guarantees a good spectral bandwith (500-950nm) with a peak responsivity at 755nm. The main advantages of this device are the high uniformity of the silicon sensors in all elctro-optical parameters, due to the monolithic construction and the high optical responsivity, due to the antireflective coating deposited on the phototransistor’s areas. Applications Optical encoders Incremental encoders Optical Receivers Controls/drives Features High uniformity of silicon cells High transparency resin High gain Very small dimensions Reference dots on gold layer for very precise alignment Reference holes on frame for mechanical alignment


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