SMD phototransistor OIT9C
silicon

SMD phototransistor
SMD phototransistor
SMD phototransistor
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Characteristics

Other characteristics
SMD, silicon
Current

1 mA

Voltage

80 mV

Description

OIT9C 4-ch. phototransistor array 0.60mm optical pitch on plastic SMD package OIT9C consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector on the back substrate, which is tied to two pads and every emitter is accessible to specific pad. The optical pitch of the array is 0.60 mm, the LCC package electrical pitch is 1.27 mm. The active area of each element is 0.20 x 0.45 mm2. The advantages of this product are the high uniformity of the silicon sensors, due to the monolithic construction and to the extremely controlled microelectronic process, the high stability of the signal and the high optical responsivity, due to the antireflective coating deposited on the phototransistor’s areas. The encapsulant is a clear silicone material, having medium hardness, in order to be robust against RoHS soldering processes and high optical performances (transmittance close to 100% in the range 300-900nm). The package material is an high quality plastic material, with high TG. The size is reduced to the minimum, in order to optimize the cost and the encoder space. Two reference marks are available for the precise collimator positioning. Applications Extended temperature encoders Optical encoders Incremental encoders Controls/drives Features Very high uniformity of silicon cells High temperature range Robust packaging High transparency resin High gain Designed to meet industrial specifications Reference holes for precise mounting

Catalogs

OIT9C
OIT9C
3 Pages
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