Silicon phototransistor OIT6C

silicon phototransistor
silicon phototransistor
silicon phototransistor
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Other characteristics
silicon, SMD

1 mA


80 mV


OIT6C 12-ch. phototransistor array 0.60mm optical pitch on plastic SMD package General Description OIT6C consists in two silicon phototransistor’s monolithic arrays. The phototransistors have a common collector on the back substrate, which is tied to two single pads and every emitter is accessible to specific pad. The optical pitch of the array is 0.60 mm, the LCC package electrical pitch is 1.27 mm. The active area of each element is 0.20 x 0.45 mm2. The advantages of this product are the high uniformity of the silicon sensors, due to the monolithic construction and to the extremely controlled microelectronic process, the high stability of the signal and the high optical responsivity, due to the antireflective coating deposited on the phototransistor’s areas. The packaging method is oriented to industrial harsh applications, which means high temperature range, high stability in time and very high uniformity of the silicon cells. Applications Optical encoders Incremental encoders 12 bit absolute encoders Optical Receivers Controls/drives Features High uniformity of silicon cells High transparency resin High gain Reference holes for precise mounting 0.6 mm optical pitch RoHS compliant _________________
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