Photodiode array XSJ-10-D7A-16X-K4-750

Description This 4X56GBaud Array 400Gbps photodiode chip, which is top-illuminated and mesa structure high data rate digital PIN photodiode chip, active area size is Φ16μm. Its features is high, low capacitance, low dark current and excellent reliability, application 1200nm to 1600nm with single mode fiber wavelength , with date rate up to 50Gbps long wavelength optical receiver. Features Φ16μm active area. Ground-Signal-Ground (GSG) bond pad structure, 4X56GBaud array. Low dark current, low capacitance, high responsibility. Date rate: ≥ 56GBaud/channel. Die pitch: 750μm. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. Applications 200G Optical Modules. 400G Optical Modules.