PIN photodiode XSJ-10-G6-38

Description This high data rate 25Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ38μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 25Gigabit Ethernet and Multi-mode communication etc. Features Φ38μm active area. Low capacitance and low dark current. High responsibility. Data rate up to 25Gbps. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. Applications 25Gigabit Ethernet/Fiber channel. 25Gbps AOC (Active Optical Cable) receiver at 850nm. 25Gbps VCSEL based parallel optical interconnects. 25Gbps SFP+. 4X25Gbps QSFP.