PIN photodiode XSJ-10-G5-55

Description This high data rate 14Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ55μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 10Gigabit Ethernet and Multi-mode communication etc. Features Φ55μm active area. Low capacitance and low dark current. Data rate up to 14Gbps. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. Applications 10Gigabit BASE-SR Ethernet. 8Gbps Fiber Channel data transmission. FDR InfiniBand data transmission.