A range of broadband IR LEDs is now distributed by Scitec Instruments.
Typical emission bandwidth is 0.5 mm and power levels at 10s to 100s of microwatts depending on duty cycle etc. The devices now offered are superior to the prior ones because:
LEDs are fabricated from III-V heterostructures grown onto InAs substrates. Optical immersion of lens with flip-chip devices enables three to five fold increase of output power.
Features
• Low power consumptions (µW to mW range)
• Angle of emittance 6.0±1.2
• CW power at I=200 mA, PCW, mW: >1.0±0.2
• Switching time, ns: <20
• Thread: M5x0.5
• Emission size, mm: 3.3 diameter
• Far-field pattern, FWHM, °: <35
• Operation (storage) conditions, °C: -25 to +60 (+80)
• Polarity: short wire or black point is negative
Series LED21Sr - Optically Immersed 2.15 µm LED
Please note: All IR LED specifications are subject to change without notice.
led package
LEDs are fabricated from III-V heterostructures grown onto InAs substrates. Optical immersion of lens with flip-chip devices enables three to five fold increase of output power.
Features
• Low power consumptions (µW to mW range)
• Angle of emittance <40°
• Switching time: 10 ns (typical), 20 ns (max)
• Narrow bandwidth: FWHM = 0.1 to 0.2 λmax
• Wide operating temperature range