Panel aluminum nitride Aluminum Nitride Ceramics

insulatinghigh thermal conductivity

Overview
Aluminium nitride (AlN) ceramics are engineering-grade ceramic materials composed primarily of aluminium nitride (AlN). They combine high thermal conductivity, electrical insulation, chemical stability, high mechanical strength and low thermal expansion, making them suitable for electronic packaging, laser and optoelectronic components, microwave/RF applications and high-temperature environments.

Key properties of aluminium nitride (AlN) ceramics
Excellent mechanical properties with flexural strength often exceeding that of Al2O3 and BeO. Good thermal stability and corrosion resistance. The material simultaneously offers high thermal conductivity and good electrical insulation. Stable in many molten-salt environments and thermally stable up to approximately 1500°C. Low coefficient of thermal expansion and thermal shock resistance. Specific optical and acoustic properties for advanced device applications.

Forming and processing

• Ceramic injection molding (CIM)
• Low-pressure injection molding
• Cold isostatic pressing (CIP)
• Dry pressing
• Casting molding
• Precision machining

Product examples / forms

• AlN ceramic heat sinks for high-power systems
• AlN crucibles, evaporation boats and other high-temperature corrosion-resistant parts
• Direct-bonded copper (DBC) substrates
• AlN ceramic rods
• AlN ceramic sheets
• AlN ceramic substrates/boards
• AlN ceramic heaters
• Custom-shaped components

Applications

• Parts for semiconductor manufacturing equipment
• Integrated circuit packaging
• Thermal module substrates
• High-power transistor module substrates
• Substrates for high-frequency devices
• Heated insulation substrates for thyristor modules
• Mounting substrates for semiconductor lasers and LEDs
• Hybrid integrated modules and ignition device modules
• Sintering of structural ceramics
• AlN crucibles for metal melting and certain e-cigarette components
• Emission and substrate materials for optoelectronic applications

Notes on optical and epitaxial uses
AlN has a direct bandgap up to about 6.2 eV, suitable for blue and deep-UV emitters (UV/deep-UV LEDs, UV laser diodes, UV detectors). It can form solid solutions with III-nitrides such as GaN and AlGaN, enabling continuous bandgap tuning. AlN crystals are advantageous as GaN epitaxial substrates due to thermal and chemical compatibility, supporting reduced defect density and improved device performance.

Typical AlN ceramic substrate specifications
Common panel sizes (examples): 25.4 mm x 50.8 mm, 63.5 mm x 76.2 mm, 101.6 mm x 114.3 mm, 127 mm x 152.4 mm. Typical thicknesses: 0.25 mm, 0.5 mm, 0.63 mm, 1 mm, 1.5 mm, 2 mm. Custom sizes available on request.

Features / technical specifications

• Main composition: aluminium nitride (AlN)
• Combination of high thermal conductivity and good electrical insulation
• High mechanical strength (flexural strength often exceeding Al2O3 and BeO)
• Chemical stability and corrosion resistance at elevated temperature
• Thermal stability: typically up to approximately 1500°C
• Low coefficient of thermal expansion and thermal shock resistance
• Distinct optical properties (direct bandgap up to ~6.2 eV)
• Forming and processing methods: injection molding, low-pressure injection, cold isostatic pressing, dry pressing, casting, precision machining
• Standard sizes as listed and custom shapes upon request