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Current: -16.4 A
Voltage: -60 V
... switching and board-level power management where a DPAK P-channel
MOSFET is required.
Technical characteristics / specifications
- Device type: P-channel power MOSFET
- VDS (max):
Infineon Technologies AG
Current: 40 A
Voltage: 40 V
... Short description
BSZ063N04LS6 is a 40 V OptiMOS 6 power N-channel
MOSFET designed for SMPS, battery chargers and ORing applications. It offers approximately 30% lower RDS(on) compared with the previous generation and is RoHS ...
Infineon Technologies AG
Current: 61 A
Voltage: 600 V
... Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as ...
Infineon Technologies AG
Current: 61 A
Voltage: 600 V
... Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as ...
Infineon Technologies AG
Current: 61 A
Voltage: 600 V
... Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as ...
Infineon Technologies AG
Current: 20 A
Voltage: 600 V
... Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as ...
Infineon Technologies AG
Current: 18 A
Voltage: 600 V
... Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as ...
Infineon Technologies AG
Current: 9 A
Voltage: 600 V
... Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as ...
Infineon Technologies AG
Current: 101 A
Voltage: 600 V
... Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as ...
Infineon Technologies AG
Current: 101 A
Voltage: 600 V
... Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as ...
Infineon Technologies AG