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Current: -16.4 A
Voltage: -60 V
... P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. ...
Infineon Technologies AG
Current: 40 A
Voltage: 40 V
OptiMOS™ 6 power MOSFETs combining best-in-class RDS(on) with superior switching performance The OptiMOS™ 6 power MOSFET 40V family is optimized for a variety of applications and circuits, such as synchronous rectification ...
Infineon Technologies AG
Current: 61 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body ...
Infineon Technologies AG
Current: 61 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body ...
Infineon Technologies AG
Current: 61 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body ...
Infineon Technologies AG
Current: 20 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body ...
Infineon Technologies AG
Current: 18 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body ...
Infineon Technologies AG
Current: 9 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body ...
Infineon Technologies AG
Current: 101 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body ...
Infineon Technologies AG
Current: 101 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body ...
Infineon Technologies AG
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