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Long accepted as a tool for depth profiling thin films and insulating materials, Quadrupole Dynamic SIMS (D-SIMS) has become the surface analysis method of choice for characterizing ultra shallow implants used in semiconductor devices. Shrinking device geometries require ultra-shallow, high dose implantation of intentional dopants such as boron and arsenic and the use of thinner, highly controlled insulating layers (oxides and oxynitrides). These critical processes of modern semiconductor device fabrication are ideally suited to the analytical performance of Physical Electronics' ADEPT-1010 surface analysis instrument.
The ADEPT-1010 dynamic SIMS analysis instrument employs a unique secondary ion extraction system which provides high transmission with a quadrupole dynamic SIMS platform. High transmission yields low detection limits offering routine analyses of implant junction depth and dose. These critical factors in implantation can be measured with reproducibility of a few percent, consistent with the needs of the semiconductor industry. In addition, the ADEPT-1010 surface analysis instrument can be used to monitor the nitrogen content of nitrided oxides with thickness of 5nm and less.
The ultra-high vacuum environment of the ADEPT-1010 allows for depth profiling of low levels of oxygen and carbon in SiGe layers while maintaining excellent depth resolution and low sputter rates. This capability is important to the integrity of these high speed SiGe devices.
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The new PHI TRIFT V nanoTOF surface analysis instrument is the next generation of PHI’s highly successful line of TOF-SIMS instruments which utilize the patented TRIFT analyzer. Several significant improvements have been introduced with the nanoTOF. The superior performance TRIFT analyzer has been combined with a revolutionary new sample handling platform. This innovative new sample handling platform was designed from the ground up specifically for TOF-SIMS, adding the flexibility needed to accommodate samples with complex geometries. In addition, improvements have been made in charge compensation and ion gun performance.
Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) provides sub-micron elemental, chemical, and molecular characterization and imaging of solid surfaces and thin films for products such as semiconductors, hard disk drives, polymers, paint and other surface coatings. Manufacturing companies in the chemical, semiconductor and pharmaceutical industries can use the nanoTOF to improve product performance, conduct failure analysis and manage process control. Time-of-Flight SIMS surface analysis instruments differ from Dynamic SIMS instruments in that they can analyze the outermost one or two mono-layers of a sample while preserving molecular information.
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The IMS1280 is based on a double focusing mass spectrometer with a large radius magnetic sector (585 mm). The secondary ion optics has been optimized to work at full transmission up to 6000 mass resolution. This very high transmission coupled with ion bombardment of oxygen or cesium allows the measurement of isotope ratios for species at trace level concentrations (U/Pb dating experiments) or for stable isotopes (oxygen or carbon). The automation level and new control of the optics parameters lead to an exceptional reproducibility on isotopic ratio measurements that is not achievable on any other SIMS instruments (0.1permil level external reproducibility).
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The CAMECA SIMS 4600 is a full-wafer quadrupole SIMS with top performances in next generation semiconductor element depth profiling. Based on the experience gained with the SIMS 4550, it provides the same performances but add the 200mm or 300mm full wafer analyis and mapping capabilities (see example below). The wafers are handled horizontally and the geometry has been optimized in order to be compatible with:
- single normal incidence oxygen FLIG gun or
- dual beam configuration (normal oxygen FLIG and 60° cesium FLIG ion guns).
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