PN junction diode CMDD series
surface-mountswitchingsilicon

PN junction diode - CMDD series  - Central Semiconductor - surface-mount / switching / silicon
PN junction diode - CMDD series  - Central Semiconductor - surface-mount / switching / silicon
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Characteristics

Technology
PN junction
Mounting
surface-mount
Function
switching
Technical characteristics
silicon
Reverse voltage

75 V, 180 V, 250 V

Description

The CENTRAL SEMICONDUCTOR CMDD3003 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for switching applications requiring a extremely low leakage diode. The Central Semiconductor CMDD2004 is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for applications requiring high voltage capability. The CENTRAL SEMICONDUCTOR CMDD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for high speed switching applications. The CENTRAL SEMICONDUCTOR CMDD6001 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for switching applications requiring a extremely low leakage diode.

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