- Electricity - Electronics
- Electronic Component
- PN junction diode
- Central Semiconductor
PN junction diode BAS series SMDswitchingsilicon
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Characteristics
- Technology
- PN junction
- Mounting
- SMD
- Function
- switching
- Technical characteristics
- silicon
- Reverse voltage
60 V, 75 V, 85 V
Description
The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-143 surface mount case. This device is designed for highspeed switching applications.
MARKING CODE: A61 or JTW
The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount SOT-143 case. This device is designed for high speed switching applications.
MARKING CODE: L51 or WL5
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