Bipolar transistor
powersilicon

bipolar transistor
bipolar transistor
bipolar transistor
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Characteristics

Type
bipolar
Technology
power
Other characteristics
silicon
Voltage

Min.: 12 V

Max.: 400 V

Current

Min.: 1 A

Max.: 5 A

Description

Diodes is the market leader when it comes to Bipolar transistors. By utilizing its wide line up of in-house packaging and superior silicon technology, Diodes is ideally positioned to meet your application needs for Bipolar transistors. Continued Innovation The Bipolar transistor portfolio is built on successive generations of our innovative matrix emitter process. Years of know-how, leading edge designs and process innovation have extended our leadership in building ultra-low saturation, fast switching transistors. Best-in-Class Performance With focus on optimizing processes for the lowest saturation voltage, reduced die area and subsequently improved switching performance, the consequent reduction in power dissipation allows ever smaller surface mount packages, which still meet the demands of the target applications. The inherent ruggedness to ESD of the Bipolars along with their very low specific on-resistance also make them very cost effective alternatives to MOSFET technology in a wide range of circuit topologies. Application-Specific Products Market demands for improved electronic systems solutions, whether in terms of improved efficiency, increased power density, or just cost reduction, drive all our application specific products. Avalanche transistors, Gate drivers and H-bridge devices have all been developed to create dedicated solutions driven by customer needs and combine the benefits of the exceptional transistor die performance with Diodes packaging expertise.

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