Field-effect MOSFET module DMG, DMS series
powerSchottky diode

field-effect MOSFET module
field-effect MOSFET module
field-effect MOSFET module
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Characteristics

Type
field-effect
Technology
power
Other characteristics
Schottky diode
Voltage

30 V

Current

Min.: 7 A

Max.: 12.7 A

Description

DIOFET is a proprietary process that monolithically integrates a power MOSFET with a Schottky diode into a single Silicon chip. The integrated Schottky reduces the forward voltage drop of the body diode by almost 50% and also has a lower reverse recovery charge. In application, this means the conduction and switching losses are reduced, and overall the circuit will operate at a higher efficiency with a reduced operating temperature. In addition, the DIOFET is an avalanche rugged process and the devices have a low gate capacitance ratio to reduce the risk of shoot-through currents. The DIOFET is well suited for Point of Load (PoL) DC-DC converters used in computing, telecoms and industrial applications including: Laptops, Netbooks and Notebooks Set-top boxes Servers and Desktop Computers Telecom Equipment

Catalogs

*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.