IGBT transistor module

IGBT transistor module
IGBT transistor module
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Features: Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3 x Ic Thin wafer technology combined with the SPT design results in a competitive low VCE(sat) SONIC™ diode


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