Semiconductor metrology system Therma-Probe®

The Therma-Probe® ion implant/anneal metrology systems enable inline implant dose monitoring for a range of semiconductor technologies, including advanced design node devices and compound semiconductor devices. The Therma-Probe 680XP and 780 produce critical process information about ion implant dose and profile, implant and anneal uniformity, and end of range damage. In addition, the Therma-Probe systems’ high resolution micro uniformity maps provide fingerprinting capability for implant and anneal process development. Applications Engineering analysis, Inline process monitor, Tool monitor, Process tool matching The Therma-Probe 680XP metrology system supports inline monitoring for ion implantation and anneal processes for silicon-based devices at the 2Xnm/1Xnm design nodes. It provides measurement coverage of the full energy/dose matrix and produces high density micro maps that can reveal implantation and annealing uniformity signatures. The Therma-Probe 680XP produces data for key implant and anneal process control. The Therma-Probe 780 metrology system supports inline monitoring for ion implantation and anneal processes for silicon-based devices at <1Xnm design nodes. By providing high performance short-term and long-term dose detectability, the Therma-Probe 780 enables tight process control for a wide range of critical processes parameters, including dose, energy and AOI for implant processes, and activation and damage recovery for anneal processes. In addition, the Therma-Probe 780 supports wide bandgap (SiC, GaN, etc.) semiconductor ion implant/anneal process monitoring.