Beam inspection system eSL10™

scanning3DAI

The eSL10™ electron-beam (e-beam) patterned wafer defect inspection system leverages the industry’s highest landing energy and high resolution to capture small physical and high aspect ratio defects, supporting process development and production monitoring for advanced logic, DRAM and 3D NAND devices. With an innovative electron optics design, the eSL10™ produces high beam current density at a small spot size and the industry’s widest range of operating conditions for defect capture across an array of challenging process layers and device structures. Revolutionary Yellowstone™ scanning mode supports high speed operation without compromising resolution, for efficient investigation of suspected hotspots or defect discovery within a broad chip area. Industry-unique Simul-6™ technology provides surface, topographic, material contrast and deep trench information in a single scan, reducing the time required to collect complete information on a variety of defect types. With integrated Artificial Intelligence (AI), the eSL10 employs SMARTs™ deep learning algorithms that discriminate key DOIs from pattern and process noise, enabling capture and classification of critical defects during R&D and ramp. High resolution defect capture, Defect discovery, R&D process debug, Engineering analysis, Ramp and line monitoring