Infrared photodetector RS615BM1
near-infraredInGaAsfor non-destructive testing

Infrared photodetector - RS615BM1 - Raythink Technology Co., Ltd. - near-infrared / InGaAs / for non-destructive testing
Infrared photodetector - RS615BM1 - Raythink Technology Co., Ltd. - near-infrared / InGaAs / for non-destructive testing
Infrared photodetector - RS615BM1 - Raythink Technology Co., Ltd. - near-infrared / InGaAs / for non-destructive testing - image - 2
Infrared photodetector - RS615BM1 - Raythink Technology Co., Ltd. - near-infrared / InGaAs / for non-destructive testing - image - 3
Infrared photodetector - RS615BM1 - Raythink Technology Co., Ltd. - near-infrared / InGaAs / for non-destructive testing - image - 4
Infrared photodetector - RS615BM1 - Raythink Technology Co., Ltd. - near-infrared / InGaAs / for non-destructive testing - image - 5
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Characteristics

Detected light
infrared, near-infrared
Type
InGaAs
Applications
for non-destructive testing, industrial
Other characteristics
with integrated temperature controller, thermoelectrically-cooled, fast

Description

Description
The RS615BM1 is a general-purpose short-wave infrared InGaAs focal plane detector with a 640×512 area array and 15μm pixel pitch. It supports high frame-rate operation and ROI windowing, and is supplied in a hermetically sealed metal package with a built-in single-stage TEC for active temperature control. The detector provides low power consumption and is suitable for a range of industrial SWIR imaging tasks.

Features
  • Pixel pitch: 15μm
  • Area array size: 640×512
  • Maximum frame rate (full window): 400 fps @ 25 MHz
  • Typical power consumption: ≤240 mW
  • Outline dimensions: 32.0×23.5×7.0 mm³ (excluding pin size)
  • Device weight: 25±2 g

Applications
  • Image enhancement and low-light SWIR imaging
  • Machine vision and automated inspection
  • Photovoltaic cell inspection
  • Industrial sorting and material identification
  • Laser detection and monitoring

Specifications
  • Sensor: InGaAs
  • Spectral response range: 0.9 μm – 1.7 μm
  • Quantum efficiency: >70% (1.0 μm – 1.6 μm)
  • Optical fill factor: 100%
  • Pixel pitch: 15 μm
  • Area array size: 640×512
  • Effective pixel rate: ≥99.8%
  • Maximum frame rate (full window): 400 fps @ 25 MHz
  • Integration type: Global shutter
  • Minimum integration time: 5 μs
  • Readout noise (typical): 30 e@20°C (high gain mode)
  • Optional gain: 3-level
  • Average pixel dark current: ≤100 ke/s @20°C
  • Operating power consumption: ≤240 mW
  • Output signal swing: 1.8±0.1 V
  • Dynamic range: ≥50 dB
  • Response non-uniformity: ≤5% (non-corrected)
  • Packaging type: Hermetically sealed metal package (built-in single-stage TEC)
  • Outline dimensions: 32.0×23.5×7.0 mm³ (excluding pin size)
  • Device weight: 25±2 g
  • Operating case temperature: -40°C – +60°C
  • Storage case temperature: -55°C – +70°C

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Exhibitions

Meet this supplier at the following exhibition(s):

INTERSCHUTZ 2026
INTERSCHUTZ 2026

1-06 Jun 2026 HANNOVER (Germany)

  • More information
    Sensor+Test 2026
    Sensor+Test 2026

    9-11 Jun 2026 Nürnberg (Germany)

  • More information
    *Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.